Failure mechanisms and reliability of the Al-chip- metallization during power cycling
نویسندگان
چکیده
This paper studies the failure mechanisms and the reliability of the chip-metallization of a new power module using a copper clip soldered on the top side of the chip, instead of aluminum wire bonds. Both power cycling tests and thermo-mechanical Finite Elements simulations are performed. This study takes advantages of the numerical simulations to analyze in details plastic strains and crack growth in the chip-metallization under different Active Power Cycling conditions. Lifetime models are then deduced by correlating the experimentally obtained lifetime with the corresponding calculated plastic strains and crack growth criteria. Mots clés: Module de puissance ; Propagation de fissure; Méthode Elements Finis (FEM) Simulations; MOSFET; cycles actifs de puissance; Al métallisation; thermomécanique; CTOD ; durée de vie.
منابع مشابه
Fast Thermal Cycling Stress and Degradation in Multilayer Interconnects
The thermal cycling stress method is popularly used to study the thermal mechanical effect on metallization films in VLSI applications, specially in interconnect systems of power IC. The fast thermal cycling stress method reported in this paper has several advantages compared with using a conventional oven for thermal stress. A special test chip is designed to demonstrate the application of thi...
متن کاملBoard Level Reliability Comparison of Lead Free Alloys
Board level reliability testing was used to compare six lead free alloys to tin-lead eutectic using a 98 ball Wafer Level Chip Scale Package (WLCSP). The component had a 0.5mm Ball Grid Array (BGA) pitch, and Al/NiV/Cu pad metallization. Thermal cycling (4 conditions), cyclic bend (2 conditions), cyclic drop (3 conditions), and solder joint array tensile testing (3 conditions) were utilized to ...
متن کاملContact resistance and adhesion performance of ACF interconnections to aluminum metallization
Flip chip joining technology using anisotropically conductive films (ACFs) has become an attractive technique for electronic packaging. However, several factors have hindered the wide spread use of this technology. Along with the reliability issue, these factors also include the low availability and high cost of the bumped wafers. This paper introduces the feasibilities of using unbumped die wi...
متن کاملImpact of Non-blocking Vias on Electromigration and Circuit-level Reliability Assessments of Cu Interconnects
In Cu metallization, refractory metal liners at vias generally block electromigration. As liner thicknesses are decreased, fully-blocking liners at vias become less certain due to liner ruptures. We have developed and exercised a reliability CAD tool, SysRel, for circuit-level interconnect reliability assessments, and used it to assess the impact of non-blocking vias on circuit-level reliabilit...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2015